发明名称 METHOD FOR FORMING WIRING PATTERN, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, CIRCUIT BOARD AND MANUFACTURING METHOD THEREFOR, AND OPTOELECTRONIC DEVICE AND ELECTRONIC EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a wiring pattern, capable of forming a uniform rewiring over an entire surface of a wafer without the need for the full surface thin film forming step (sputtering) and etching step in a step of forming the wiring pattern in manufacture of a semiconductor chip, and to provide a semiconductor device and a method for manufacturing the same, a circuit board and a method for manufacturing the same, and as an optoelectonic device and electronic equipment. SOLUTION: The method for forming the wiring pattern comprises (1) a step of providing a catalyst over the entire surface, (2) a step of forming a resist on a wiring pattern forming region, (3) a step of inactivating or removing the catalyst, and (4) a step of electroless plating of the wiring pattern by peeling off the resist. Instead of the steps (2) to (4), a step of removing the catalyst formed on a region, except for the region formed by the wiring pattern by using a laser or the like without forming the resist may be used.
申请公布号 JP2002359245(A) 申请公布日期 2002.12.13
申请号 JP20020050470 申请日期 2002.02.26
申请人 SEIKO EPSON CORP 发明人 MATSUI KUNIYASU
分类号 G02F1/1345;H01L21/288;H01L21/3205;(IPC1-7):H01L21/320;G02F1/134 主分类号 G02F1/1345
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