发明名称 VERTICAL DIFFUSION/CVD APPARATUS AND METHOD OF PROCESSING WAFER
摘要 PROBLEM TO BE SOLVED: To enhance quality of forming a film on wafers by preventing oxidation and contamination of the wafers, without having to install a stand-by chamber and to reduce product cost, by reducing process time of the wafers in a vertical diffusion/CVD apparatus. SOLUTION: In a vertical diffusion/CVD apparatus, in which wafers 10 held in a boat 9 are inserted to and drawn out from the vertical furnace by a boat elevator 6 installed in the lower part of the vertical furnace, the insertion speed of the boat is kept at a speed in the range of 400 to 2,000 mm/min and the wafer temperature at the completion of the wafer insertion is set lower than 400 deg.C.
申请公布号 JP2002359202(A) 申请公布日期 2002.12.13
申请号 JP20020064802 申请日期 2002.03.11
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 ENDO YOSHIHIDE;MAEDA KIYOHIKO
分类号 C23C16/44;H01L21/205;H01L21/22;H01L21/324;(IPC1-7):H01L21/205 主分类号 C23C16/44
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