| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive effect magnetic head having high resistance to external factors due to static electricity or the like, and excellent high frequency characteristics. SOLUTION: In a silicon layer 4 installed on a substrate 1 by being held between insulating layers 3, 5, clamp circuits 14, 15, 16, 17 having diodes and a circuit 7 for recording, reproducing and amplification are formed, and at least one or more clamp circuits are provided to select two from a first magnetic shield 18, a second magnetic shield 22, a first electric pole 19, a second electric pole 20 and a substrate 1 constituting a magnetoresistive effect element and electrically connect these two parts. Thus, destruction of a magnetoresistive effect film 21 by external factors introduced in a manufacturing process can be prevented.
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