发明名称 |
Circuit pattern of resistance heating elements and substrate-treating apparatus incorporating the pattern |
摘要 |
A technology that achieves a highly uniform temperature distribution on the surface of large-area semiconductor wafers and substrates for liquid crystals without prior measurement of the resistance-heating-element circuit and subsequent adjustment of the value of resistance. At least one current-receiving point 4 and at least one current-releasing point 5 are provided at the central portion of an insulating substrate 1. One or more resistance-heating-element circuits 2 are embedded in the insulating substrate spirally or pseudospirally from the central portion including the current-receiving point 4 to the peripheral portion of the insulating substrate 1. All the circuits merge with one another at the outermost portion. One or more resistance-heating-element circuits are separated at the outermost portion of the resistance-heating-element circuits and are formed spirally or pseudospirally from the outermost portion to the central portion including the current-releasing point 5.
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申请公布号 |
US2002185488(A1) |
申请公布日期 |
2002.12.12 |
申请号 |
US20020119778 |
申请日期 |
2002.04.11 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NATSUHARA MASUHIRO;NARITA MASASHI;NAKATA HIROHIKO;KUIBIRA AKIRA |
分类号 |
H05B3/20;H01L21/00;H01L21/02;H01L21/324;H05B3/10;H05B3/14;H05B3/28;H05B3/68;(IPC1-7):H05B3/68 |
主分类号 |
H05B3/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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