发明名称 |
APPARATUS OF ELECTRON EMISSION LITHOGRAPHY USING SELECTIVELY GROWN CARBON NANOTUBE AND LITHOGRAPHY METHOD THEREOF |
摘要 |
PURPOSE: An apparatus of electron emission lithography and a lithography method thereof are provided to exactly control line-width and to improve a throughout by using a selectively grown carbon nanotube as an electron emission source of lithography. CONSTITUTION: A plurality of carbon nanotubes(11) are formed on a substrate(12). Electrons are emitted from the carbon nanotubes(11) by applying a desired voltage to the substrate(12) having carbon nanotubes(11) via a voltage supply part(16). The emitted electrons are reached to a sample(14) formed oppositely to the substrate(11) by applying a magnetic field to the emitted electrons. At this time, e-beam resists(15,15') are formed on the sample(14) by controlling the intensity of the magnetic field applied in accordance with the spaced distance between the e-beam resists(15,15') and the carbon nanotubes(11). The e-beam resists(15,15') are developed by lithography. |
申请公布号 |
KR20020092488(A) |
申请公布日期 |
2002.12.12 |
申请号 |
KR20010031125 |
申请日期 |
2001.06.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, WON BONG;YOO, IN GYEONG |
分类号 |
C01B31/02;G03F7/20;H01J3/02;H01J9/02;H01J37/305;H01L21/027 |
主分类号 |
C01B31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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