发明名称 |
Overvoltage protection circuit |
摘要 |
The provision of an overvoltage protection circuit that can be structured with a small number of elements in the same semiconductor substrate along with a CMOS integrated circuit to be protected. An overvoltage protection circuit 1 comprising a voltage divider 2 comprising a first resistance element 21 and a second resistance element 22, which divide the voltage that is supplied from an external power supply terminal 11, an inverter circuit 3 comprising a third resistance element 32, and a high voltage MOS transistor 31 which uses as its input the voltage of the voltage division point of this voltage divider circuit 2, and a switching element 4 comprising a high voltage MOS transistor 41 that cuts off excessive voltage supplied to the CMOS integrated circuit 5 to be protected, is fabricated in the same semiconductor substrate as the CMOS integrated circuit 5.
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申请公布号 |
US2002186518(A1) |
申请公布日期 |
2002.12.12 |
申请号 |
US20020123023 |
申请日期 |
2002.04.15 |
申请人 |
NISHIKAWA MUTSUO;UEYANAGI KATSUMICHI;UEMATSU KATSUYUKI;KITAMURA AKIO |
发明人 |
NISHIKAWA MUTSUO;UEYANAGI KATSUMICHI;UEMATSU KATSUYUKI;KITAMURA AKIO |
分类号 |
H01L27/04;G05F1/10;H01L21/822;H01L21/8238;H01L27/02;H01L27/092;H01L29/78;H02H3/20;H02M3/155;H03K17/08;(IPC1-7):H02H3/20 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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