发明名称 Overvoltage protection circuit
摘要 The provision of an overvoltage protection circuit that can be structured with a small number of elements in the same semiconductor substrate along with a CMOS integrated circuit to be protected. An overvoltage protection circuit 1 comprising a voltage divider 2 comprising a first resistance element 21 and a second resistance element 22, which divide the voltage that is supplied from an external power supply terminal 11, an inverter circuit 3 comprising a third resistance element 32, and a high voltage MOS transistor 31 which uses as its input the voltage of the voltage division point of this voltage divider circuit 2, and a switching element 4 comprising a high voltage MOS transistor 41 that cuts off excessive voltage supplied to the CMOS integrated circuit 5 to be protected, is fabricated in the same semiconductor substrate as the CMOS integrated circuit 5.
申请公布号 US2002186518(A1) 申请公布日期 2002.12.12
申请号 US20020123023 申请日期 2002.04.15
申请人 NISHIKAWA MUTSUO;UEYANAGI KATSUMICHI;UEMATSU KATSUYUKI;KITAMURA AKIO 发明人 NISHIKAWA MUTSUO;UEYANAGI KATSUMICHI;UEMATSU KATSUYUKI;KITAMURA AKIO
分类号 H01L27/04;G05F1/10;H01L21/822;H01L21/8238;H01L27/02;H01L27/092;H01L29/78;H02H3/20;H02M3/155;H03K17/08;(IPC1-7):H02H3/20 主分类号 H01L27/04
代理机构 代理人
主权项
地址