Nonvolatile semiconductor memory device having hierarchical sector structure

摘要

Disclosed is a sector structure of a NOR type flash memory by which the layout area in a chip can be minimized thereby being used in a highly integrated semiconductor device. The structure includes a plurality of floating gate memory cells and a plurality of sectors for receiving a same matrix row select signal. Bit lines of each of the sectors connected to global bit lines so that the plurality of sectors may share a sense amplifier and a write driver.