发明名称 |
TRENCH SCHOTTKY RECTIFIER |
摘要 |
a schottky rectifier is provided. The Schottky rectifier comprises: (A) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region (12C) of first conductivity type adjacent the first face (12A) and a drift region(12D) of the first conductivity type adjacent the second face, and with the drift region having a lower net doping concentration than that of the cathode region; (B) one or more trenches extending from the second face (12B) into the semiconductor region and defining one or more mesas (14) within the semiconductor region; (C) an insulating region (16) adjacent the semiconductor region in lower portions of the trench; (D) and an anode electrode (18) that is (I) adjacent to and forms a schottky rectifying contact with the semiconductor at the second face (12), (II) adjacent to and forms a schottky rectifying contact with the semiconductor region within upper portions of the trench and (III) adjacent to the insulating region (16) within the lower portions of the trench.
|
申请公布号 |
WO02099889(A1) |
申请公布日期 |
2002.12.12 |
申请号 |
WO2002US17322 |
申请日期 |
2002.05.31 |
申请人 |
GENERAL SEMICONDUCTOR, INC. |
发明人 |
HSHIEH, FWU-IUAN;SO, KOON, CHONG |
分类号 |
H01L21/329;H01L27/08;H01L27/095;H01L29/47;H01L29/872;(IPC1-7):H01L29/47 |
主分类号 |
H01L21/329 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|