Single crystal silicon carbide thin film fabrication method and fabrication apparatus for the same

摘要

A single crystal silicon carbide thin film fabrication method for converting a silicon layer on the surface of a SOI substrate for film-formation into a single crystal silicon carbide thin film by a chemical reaction comprises steps of setting said SOI substrate for film-formation in a film-formation chamber and increasing the ambient temperature of the film-formation chamber to 1,200 to 1,405 DEG C while passing hydrogen gas and passing also a hydrocarbon-based gas being kept in a ratio of 1 to 5 % by volume to hydrogen gas. Apparatus for fabricating a single crystal silicon carbide thin film comprises a film-formation chamber 200 adapted to receive a SOI substrate 100 for film-formation, gas supply means 300 for supplying to film-formation chamber 200 various gases G1 to G4 necessary to fabricate the thin film, gas treatment means 500 for treating argon gas as inert gas G1, propane gas as hydrocarbon-based gas G2, hydrogen gas as carrier gas, and oxygen gas G4 supplied to the film-formation chamber 200, and temperature control means 400 for controlling the temperature of chamber 200.