| 摘要 |
<p>A semiconductor switching device of mirror logic includes two FETs having a gate width (Wg) of 600 mu m, a common input terminal (IN), two control terminal (Ctl-1, Ctl-2) and two output terminals (OUT-1, OUT-2). The resistors (R1, R2) connecting the control terminals (Ctl-1, Ctl-2) and the gate electrodes (17) of FETs are placed underneath a pad metal layer (30) extending from the common input terminal (IN). Both FETs (FET1, FET2) extend into the space between the control terminals (Ctl-1, Ctl-2) and the output terminals (OUT-1, OUT-2). The device needs can be housed in the same package as the device of non-mirror logic. <IMAGE></p> |
