| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve a step coverage between a cell region and a peripheral region by forming a dummy shot at an align key formation region. CONSTITUTION: After forming the first thermal oxide layer(21) on a silicon substrate(20), an n-type shield region(22) is formed by implanting heavily doped dopants without using a mask. After forming a nitride pattern(23) on the resultant structure, the resultant structure is counter-doped, so that a p-type counter doping region(24) is formed at the n-type shield region(22) and the first p-type implanted region(24a) is formed on the surface of the substrate(20). The second p-type implanted region(25) is formed between the etched silicon substrate(20) and the p-type counter doping region(24). The first thermal oxide layer(21) exposed between the nitride patterns(23) is oxidized, thereby forming the second thermal oxide layer of island shape.
|
