Method of fabricating a silicon carbide diode with schottky junction in a cavity,申请号GB20020025634-传众专利搜索

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发明名称	Method of fabricating a silicon carbide diode with schottky junction in a cavity
摘要
申请公布号	GB0225634(D0)	申请公布日期	2002.12.11
申请号	GB20020025634	申请日期	2002.11.02
申请人	UNIVERSITY OF NEWCASTLE UPON TYNE	发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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