| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
A titanium nitride film is selectively etched relative to a tungsten film by using as an etchant a solution containing hydrochloric acid and a hydrogen peroxide solution, the molar ratio of the hydrogen peroxide in the hydrogen peroxide solution to hydrogen chloride in the hydrochloric acid being 1/100 or less.
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| 申请公布号 |
US6492271(B1) |
申请公布日期 |
2002.12.10 |
| 申请号 |
US20000609711 |
申请日期 |
2000.06.30 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
UOZUMI YOSHIHIRO;OKUCHI HISASHI;NADAHARA SOICHI;OGAWA YOSHIHIRO;TOMITA HIROSHI |
| 分类号 |
H01L21/306;H01L21/3205;H01L21/3213;H01L21/60;H01L21/768;H01L23/52;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/306 |
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