METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact of a semiconductor device is provided to be capable of simplifying forming processes and securing a maximum contact region. CONSTITUTION: After forming a gate oxide layer(2) on a semiconductor substrate(1) having a predetermined structure, a polysilicon layer pattern(3) for a gate electrode is formed on the upper portion of the gate oxide layer(2). An Si3N4 layer(4) is formed on the polysilicon layer pattern(3) by carrying out a heat treatment under NH3 gas condition. A photoresist pattern is formed on the resultant structure for exposing one side of the polysilicon layer pattern(3). The gate oxide layer(2) is selectively etched by using the etching selectivity between the gate oxide layer and the Si3N4 layer until the predetermined portion of the semiconductor substrate is exposed. After removing the photoresist pattern, a conductive layer pattern(6) is formed on the resultant structure.