发明名称 |
Word line boost circuit |
摘要 |
An improved word line boost circuit suitable for use on integrated circuits such as flash memory devices includes a two step boosting circuit with a floating circuit node. A first circuit provides an initial boost of the output voltage from a precharged voltage. Part of the first circuit is floated, lessening a load on a second circuit. Then, the second circuit provides a second boost of the output voltage with increased power efficiency. A time delay separates the onset of the second boosting operation from the onset of the first boosting operation so as to define a two-step boost.
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申请公布号 |
US6493276(B2) |
申请公布日期 |
2002.12.10 |
申请号 |
US19990355653 |
申请日期 |
1999.08.02 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LIN YU SHEN;HUNG CHUN-HSIUNG;WAN RAY-LIN |
分类号 |
G11C5/14;G11C8/08;(IPC1-7):G11C7/00 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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