发明名称 Word line boost circuit
摘要 An improved word line boost circuit suitable for use on integrated circuits such as flash memory devices includes a two step boosting circuit with a floating circuit node. A first circuit provides an initial boost of the output voltage from a precharged voltage. Part of the first circuit is floated, lessening a load on a second circuit. Then, the second circuit provides a second boost of the output voltage with increased power efficiency. A time delay separates the onset of the second boosting operation from the onset of the first boosting operation so as to define a two-step boost.
申请公布号 US6493276(B2) 申请公布日期 2002.12.10
申请号 US19990355653 申请日期 1999.08.02
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 LIN YU SHEN;HUNG CHUN-HSIUNG;WAN RAY-LIN
分类号 G11C5/14;G11C8/08;(IPC1-7):G11C7/00 主分类号 G11C5/14
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