SEMICONDUCTOR MEMORY DEVICE CAPABLE OF PREVENTING OPERATION FAIL DUE TO NOISE OF ROW ADDRESS STROBE SIGNAL AND METHOD THEREOF

摘要

PURPOSE: A semiconductor memory device capable of preventing operation fail due to noise of row address strobe signal and method thereof are provided which can prevent an operation fail due to noise of a row address strobe signal. CONSTITUTION: A control signal generation circuit(31) generates a control signal(PSE) enabled after a constant delay time after a row address strobe signal(RASB) applied from the external in a normal mode is enabled from a logic "high" into a logic "low". An address buffer control circuit(32) generates an address input control signal(PRAE) which is activated in response to the row address strobe signal after the control signal is enabled and is inactivated in response to a column address strobe signal(CASB) applied from the external. And an address buffer(33) receives an address(ADD) from the external in response to the activation of the address input control signal.