| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which facilitates the manufacturing of a memory cell having desired properties, and a memory system and an electronic device including the semiconductor device thereof. SOLUTION: The semiconductor device is provided with a memory cell including a first and a second load transistor, Q5 and Q6, a first and a second drive transistor, Q3 and Q4, and a first and a second transfer transistor, Q1 and Q2. The semiconductor device includes a first gate-gate electrode layer 20, and a first drain-gate wiring layer 30. Assuming that a distance between the first drain-gate wiring layer 30 and a third active area 16 is L1, and a distance between the first drain-gate wiring layer 30 and a first active area 14 is L2, the semiconductor device satisfies the following equation (1). (Equation 1) L1>=L2. |
