发明名称 HEAT TREATMENT SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment system in which the low temperature section of an exhaust adapter in the reaction chamber of a film deposition system is provided with a warm wall which can sustain such a temperature as no reaction product adhere to the inner wall of the exhaust adapter. SOLUTION: Inside a heater (1), a reaction chamber comprising an outer tube (2) and an inner tube (3) is disposed and a processing space is formed in the inner tube. A substrate is placed in the processing space and heat treated by supplying process gas in the direction from the inner tube to the outer tube and then the process gas is discharged from the exhaust opening of an exhaust adapter (6) in the reaction chamber. In the heat treatment system having such a structure, a warm wall (11) receiving heat transmitted from the heater through the wall of the outer tube in the reaction chamber is provided on the inner wall of the exhaust adapter.
申请公布号 JP2002353145(A) 申请公布日期 2002.12.06
申请号 JP20010154130 申请日期 2001.05.23
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TANIYAMA TOMOSHI;TOMEZUKA KOJI
分类号 B01J19/00;C23C16/44;H01L21/205;(IPC1-7):H01L21/205 主分类号 B01J19/00
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