REFERENCE VOLTAGE GENERATION CIRCUIT AND IP CORE HAVING THE REFERENCE VOLTAGE GENERATION CIRCUIT

摘要

PURPOSE: To provide a reference voltage generation circuit that operates with a sub 1 V power supply voltage. CONSTITUTION: Changes due to the ambient temperature of the forward voltage of either Schottky diode between a plurality of Schottky diodes are compensated with the forward voltage difference between the plurality of Schottky diodes to output a reference voltage. In the Schottky diodes, the semiconductor area forming a Schottky interface is formed in the same process in which an N well area forming the channel region of a PMOS transistor or a P well area forming the channel region of an NMOS transistor is formed, and the metal area forming the Schottky interface is formed in the same process in which a silicide area forming the contact area of a MOS transistor is formed.