| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device, by which high selectivity in etching is obtained, a wafer treatment equipment used for the method, and the semiconductor device that is obtained by the method. SOLUTION: In the wafer treatment equipment, a hydro fluoric acid supply pipe 5 and an evacuation pipe 4 are connected to a vessel 1 for storing a wafer 2 to carry out a prescribed treatment. A control section 11 for controlling the supply of hydrofluoric acid is installed. The control section 1 controls time for supplying hydrofluoric acid into the vessel 1 longer than the time when the etching of a reaction product begins and shorter than the time when the etching of a gate insulation film begins.
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