| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for measuring a beam profile for analyzing acid diffusion within a resist, flare, and aberration in an optical system, and to provide an exposing method for accurately correcting proximity effect. SOLUTION: The beam measurement method comprises a process for exposing a plurality patterns onto an exposure surface with a specific interval for measuring the line width of a specific pattern, a process for performing exposure and measuring the line width by changing the pattern interval, a process for calculating the forward scattering and backward scattering in the exposure surface by simulation, a process for obtaining the aberration of an optical system by fitting a simulation result to a measurement result with the aberration of the optical system as a variable, a process for obtaining flares from the deviation between the measurement result and the simulation result, and a process for obtaining acid diffusion by changing process temperature. The exposure method is used to correct the proximity effect, based on the beam provide measurement method.</p> |
