发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor storage device showing optimal performance within the range of a maximum allowable current consumption value corresponding to inputted voltage. SOLUTION: The semiconductor storage device including a plurality of nonvolatile memories for storing data and operating with a plurality of power source voltages is provided with a voltage detection circuit for detecting inputted voltage inputted to the semiconductor storage device from the power source voltages and a central processor which sets the maximum allowable current consumption value of the semiconductor storage device based on the inputted voltage and controls the number of the simultaneous operations of the nonvolatile memory so that the current consumption value of the semiconductor storage device does not exceed the maximum allowable current consumption value.
申请公布号 JP2002351737(A) 申请公布日期 2002.12.06
申请号 JP20010160269 申请日期 2001.05.29
申请人 MITSUBISHI ELECTRIC CORP 发明人 MIYAUCHI SHIGENORI
分类号 G06F12/00;G06F12/06;G11C5/14;G11C16/30;(IPC1-7):G06F12/00 主分类号 G06F12/00
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