| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of increase the sheet resistance, in particular, of a silicide film having a miniaturized wiring width, in a silicide reaction. SOLUTION: In wiring possessing a silicide film on silicon, to which impurity ions are implanted in a semiconductor device, the problem is solved by keeping the oxygen concentration in the silicon at 1×10<18> /cm<3> or lower. |
