| 摘要 |
PROBLEM TO BE SOLVED: To shorten measuring time and to suppress the storage capacity of a data base to be a minimum, by highly precisely reproducing the electrical characteristics of a semiconductor element, based on a minimum measurement point. SOLUTION: A characteristic simulation device uses a MOS transistor model parameter. The device is provided with a data measuring means 1 taking in measurement data, a function-fitting means 2 for deciding the shape of a private function form measurement data which is fetched, a characteristic calculating means 3 calculating the electrical characteristics of drain current-drain voltage by using the decided function and a data output means 4 for outputting a calculation result by the characteristic calculation means. The function-fitting means 2 sets specified gate voltage and substrate voltage and decides the function reproducing the drain current-drain voltage characteristics at every specified gate voltage and substrate voltage through adjustment, by using multiple pieces of measurement data and a non-linear least squares method.
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