SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To overcome such a problem that a partial lead and thickness in a connection part between an element electrode and the partial lead extending from a wiring circuit sheet are small and electric connection between the partial lead and the element electrode is unstable in the case that the element electrodes or electrodes have small pitches. SOLUTION: A low elastic insulation layer 14 is formed on a part excluding the element electrode 12 formed on the upper face of a semiconductor substrate 11, a ball electrode 13 consisting of a solder is mounted on a thin film metal layer 15 formed on the element electrode 12 and the upper face of a thick film metal layer 16 and supported on the end of the opening part of the thick film metal layer 16 and the low elastic insulation layer 14.