| 摘要 |
PROBLEM TO BE SOLVED: To match the center of an operating point, when the magnetizing direction of a free layer of a magnetoresistive effect element is inverted to a zero magnetic field by excluding its influence, even if Neel coupling magnetic field is generated. SOLUTION: The magnetoresistance effect element 10 comprises the free layer 11 made of at least a ferromagnetic material, a nonmagnetic layer 12 made of a nonmagnetic material, and a laminated fixed layer 13 made of the ferromagnetic material. The element 10 is used for a magnetic memory device, in which information is recorded by utilizing a change of the magnetizing direction of the layer 11. In the element 10, the magnetizing amount of the layer 13 is set, so that the center of an operating point, when the magnetizing direction of the layer 11 is changed, becomes a zero magnetic field by using a magnetic field due to a magnetostatic coupling between the layer 11 and the layer 13.
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