| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which memory products abolished as a defective product are reproduced by changing functions and a memory product having the other functions is obtained, one part of functions is utilized and the device can be produced as a power source generating circuit, and its manufacturing method. SOLUTION: This method is a manufacturing method for a semiconductor device reproducing only a SRAM product using a sense amplifier out of a DRAM defective product (defective bit > defect relievable bit) which cannot be relieved by a defect relieving method and is made abolish disposal, when defect relieving cannot be performed for a wafer in which a DRAM is formed in consequence of determining whether defect relieving can be performed or not after a probe's check, it is determined whether the sense amplifier is normal or not (step 9). In consequence of this determination, when it is normal, it is determined whether this product is a good product for changing functions after performing defect relieving for changing DRAM functions, assembly, a defect acceleration test, a selection test (step S10-S14). In consequence of this determination, when it is a good product for changing functions, it is shipped as a SRAM of a function change product.
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