| 摘要 |
The invention relates to an integrated tunable capacitor whose design is improved with regard to conventional CMOS varactors by virtue of the fact that, in lieu of customary source/drain terminal regions, terminal regions having a distinctly larger depth are provided in the semiconductor body (A, 1). To this end, trough-like regions or collector deep implantation regions (10, 6) can be provided with which the depleted regions occurring in the event of high tuning voltages extend distinctly further into the semiconductor body (1). The inventive varactor having a broad tuning range can be produced without additional effort in mass production methods and can be used, for example, in phase locked loops. |
