| 摘要 |
PURPOSE: To provide a nonvolatile semiconductor memory which allow reducing adverse effects from writing in each storage cell on the storing status of other storage cell, preventing malfunctions, and increasing reliability, and a method of manufacturing the same. CONSTITUTION: In the nonvolatile semiconductor memory which includes a device area and a device separating area, the storage cell comprises a channel area, a gate insulating film formed on the channel area, a floating gate electrode formed on the gate insulating film, a second gate insulating film formed on the floating gate electrode, a control electrode formed on the second insulating film, and a source/drain region which is so formed as to horizontally sandwich a channel region therebetween. The device separating area comprises a device separating insulator, and a conductor which extends through the inside of the device separating insulator in a horizontal direction substantially parallel to the direction in which the source/drain region sandwiches the channel area. During writing operation, the conductor prevents the effect of the voltage from being transmitted to adjacent cells.
|
