| 摘要 |
Nonvolatile ferroelectric memory and method for fabricating the same can reduce fatigue caused by repetitive switching, drop an operation voltage, and increase an operation speed of the nonvolatile ferroelectric memory. The nonvolatile ferroelectric memory includes a plurality of wordlines formed in one direction, and a plurality of a control line and a sensing line pairs formed in a direction crossing the wordlines at fixed intervals. Unit cells of the memory formed at intersections of the wordlines and the control and signal line pairs each have first transistors formed between the control line and the sensing line with a drain coupled to a prescribed voltage. Second transistors in the unit cells have a drain coupled to the sensing line, a source coupled to a source of the first transistor, and a gate coupled to the wordline, and third transistors in the unit cells have a drain coupled to the control line, a source coupled to a gate of the first transistor, and a gate coupled to the wordline. The first transistors can have a gate dielectric film formed of a ferroelectric material.
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