Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film

摘要

A silicon oxide film has a ratio of A1 to A2 which is not higher than 0.21, where A1 is a first peak integrated intensity of a first peak belonging to Si-OH and appearing in the vicinity of a wave-number of 970 cm-1, and A2 is a second peak integrated intensity of a second peak belonging to O-Si-O and appearing in the vicinity of a wave-number 820 cm-1, and each of the first and second peak integrated intensities is defined as a product of peal width at half height and a peak height of a Raman spectrum obtained by a Raman scattering spectroscopic analysis of the silicon oxide film. The silicon oxide film is deposited under a condition that a ratio of a first flow rate Fo of oxygen gas to a second flow rate Fsi of a silicon source gas is not lower than 20.