发明名称 |
MOS field effect transistor structure and method of manufacture |
摘要 |
A method of manufacturing a metal-oxide-semiconductor field effect (MOSFET) device. A substrate having an isolating structure thereon is provided. A gate dielectric layer and a conductive layer are sequentially formed over the substrate. The conductive layer and the gate dielectric layer are patterned to form a gate structure. A low dielectric constant material spacer is formed on the sidewall of the gate structure. A source drain region is formed in the substrate on each side of the gate structure.
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申请公布号 |
US2002179982(A1) |
申请公布日期 |
2002.12.05 |
申请号 |
US20010867327 |
申请日期 |
2001.05.29 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHENG SHUI-MING;CHENG YAO-CHIN;HUANG YU-SHYANG;LIU CHIH-CHIEN |
分类号 |
H01L21/336;H01L29/78;(IPC1-7):H01L31/062 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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