| 发明名称 |
Fuse in semiconductor device and fabricating method thereof |
| 摘要 |
The semiconductor device includes a semiconductor substrate, an insulating layer on the semiconductor substrate wherein a groove is patterned to a predetermined depth in an upper surface of the insulating layer, a fuse layer at sidewalls and on a bottom of the groove, and a wire connected electrically to the fuse layer.
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| 申请公布号 |
US2002182838(A1) |
申请公布日期 |
2002.12.05 |
| 申请号 |
US20020201928 |
申请日期 |
2002.07.25 |
| 申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
PARK HYUN-SUCK |
| 分类号 |
H01L21/82;H01L23/525;(IPC1-7):H01L21/82;H01L21/44;H01L21/336 |
主分类号 |
H01L21/82 |
| 代理机构 |
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代理人 |
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