发明名称 |
METHOD FOR FABRICATING A LOW DIELECTRIC CONSTANT MATERIAL LAYER |
摘要 |
A fabrication method for a low dielectric constant (k) material layer is described. A high molecular weight material layer is formed on a substrate. The high molecular weight material layer is then cured. A bonding material layer is formed on the high molecular weight material layer, wherein a major component in the bonding material layer is an organic compound, wherein the organic compound has a silicon-containing moiety and an unsaturated hydrocarbon moiety. The bonding material layer is further cured, allowing the organic silicon compound to cross-link within the high molecular weight material layer to form a high molecular weight material layer with a silicon rich surface. Moreover, the curing for the high molecular weight material layer and for the bonding material layer can conduct concurrently.
|
申请公布号 |
US2002182849(A1) |
申请公布日期 |
2002.12.05 |
申请号 |
US20010886769 |
申请日期 |
2001.06.19 |
申请人 |
HSIEH TSUNG-TANS;TSAI CHENG-YUAN |
发明人 |
HSIEH TSUNG-TANS;TSAI CHENG-YUAN |
分类号 |
H01L21/312;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/312 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|