| 摘要 |
<p>A nonvolatile semiconductor storage device, comprising a memory cell transistor allowing two bits of a first bit and a second bit to be stored at both ends of a charge capturing layer, a comparator reading out the data from the first bit so as to judge the state of the data, and a voltage switching circuit varying the voltage conditions of a writing operation in the second pitch according to whether the state of the data is 0 or 1.</p> |
