APPARATUS AND METHOD FOR TREATING PLASMA OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: An apparatus for treating plasma of a semiconductor device is provided to prevent the device from being broken by a charge-up phenomenon, by preventing a material to process from being charged up without decreasing the density of plasma. CONSTITUTION: A plasma generating unit generates plasma of high density in a process chamber. A bias source applies a bias voltage of a single frequency to a sample table independent of the generation of plasma. A matching network(M) regulates the bias voltage to tune the impedance fluctuating during a discharge caused by the generation of plasma. A splitter is installed in the matching network, splitting up the frequency outputted from the matching network into a bottom frequency and a bottom-up radio frequency(RF) to which a predetermined frequency is added. A frequency modulating unit modulates high frequency power(23) of the bias voltage by using low frequency power(22). The frequency modulating unit modulates the power of a basic frequency by using a predetermined bottom-up RF frequency of the basic frequency when the high frequency power and the lower frequency power are respectively connected to a susceptor(8).