ELECTRODE,ELECTRON EMISSION ELEMENT AND DEVICE USING IT

摘要

A high−performance electron emission device that can further improve the electron emission characteristics of a conventional spin trapping type cold cathode, carbon nano−tube and carbon nano−fiber, and emit high−brightness electrons at a low voltage is produced to provide it as a key device in a flat panel display, imaging device, electron beam device and microwave travelling wave tube. A semiconductor film having a thickness of up to 50 nm and an electron affinity of up to 4.0 eV is provided in a spin trapping type cold cathode, carbon nano−tube, carbon nano−fiber and metal or semiconductor substrate having irregularities to produce an electron emission device. The above semiconductor film uses either one of a compound of III group atoms of such as aluminum nitride, boron nitride, aluminum/boron nitride, aluminum/gallium nitride and boron/gallium nitride and nitrogen atoms; boron/carbon nitride; and diamond.