发明名称 Thin film transistor for a liquid crystal display device and a fabrication process thereof
摘要 A thin-film transistor of a liquid crystal display device includes an ohmic electrode such that the ohmic electrode is formed of a first conductor film of a refractory metal element defined by a first lateral edge and a second conductor film containing Al and defined by a second lateral edge, wherein the second lateral edge is receded with respect to the first lateral edge when viewed in a direction perpendicular to a substrate on which the thin-film transistor is formed.
申请公布号 US2002180903(A1) 申请公布日期 2002.12.05
申请号 US20020186825 申请日期 2002.07.01
申请人 FUJITSU LIMITED 发明人 FUJIKAWA TETSUYA;MISAKI KATSUNORI
分类号 G02F1/136;G02F1/1368;H01L21/336;H01L29/417;H01L29/45;H01L29/78;H01L29/786;(IPC1-7):G02F1/136 主分类号 G02F1/136
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