发明名称 |
Thin film transistor for a liquid crystal display device and a fabrication process thereof |
摘要 |
A thin-film transistor of a liquid crystal display device includes an ohmic electrode such that the ohmic electrode is formed of a first conductor film of a refractory metal element defined by a first lateral edge and a second conductor film containing Al and defined by a second lateral edge, wherein the second lateral edge is receded with respect to the first lateral edge when viewed in a direction perpendicular to a substrate on which the thin-film transistor is formed.
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申请公布号 |
US2002180903(A1) |
申请公布日期 |
2002.12.05 |
申请号 |
US20020186825 |
申请日期 |
2002.07.01 |
申请人 |
FUJITSU LIMITED |
发明人 |
FUJIKAWA TETSUYA;MISAKI KATSUNORI |
分类号 |
G02F1/136;G02F1/1368;H01L21/336;H01L29/417;H01L29/45;H01L29/78;H01L29/786;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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