| 摘要 |
A microelectromechanical system (MEMS) motion sensor (10) for detecting movement in three dimensions of a semiconductor wafer structure has top (30), middle (40), and bottom (20) layers, with a mover (50) attached to the middle layer (40) by a flexure (56) that allows the mover (50 to move in three dimensions relative to the layers (20, 30, 40). The mover (50 has mover electrodes (70, 72) that create a capacitance with counter electrodes (80, 82) positioned on an adjacent layer (20, 30). The capacitance changes as the mover (50) moves. A capacitance detector (90) receives signals from the electrodes (70, 72, 80, 82) and detects movement of the mover (50) based on the change in capacitances. The MEMS device (10) processes the detected capacitances to determine the nature of the movement of the mover (50). The mover and counter electrodes (79, 72, 80, 82) comprise x-y electrodes (70, 80) for detecting movement in an x-y plane parallel to the middle layers (40) and z electrodes (72, 82) for detecting movement in a direction orthogonal to the x-y plane. <IMAGE> <IMAGE> |
