| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a laser marking wafer in which the reduction of the flatness of the wafer caused by a laser mark can be eliminated. SOLUTION: A hard laser mark (a) is impressed on the part Wa chamfered on the outer circumference face of a silicon wafer. At this time, in the hard laser mark (a), a relatively high annular raised part is generated on the periphery of the formed part. However, the part to be polished in the subsequent polishing stage is the surface of the silicon wafer, and is not the chamfered part Wa on the outer circumferential face of the wafer. Thus, there hardly is any probability that the raised part is polished during polishing. As a result, the reduction of the flatness of the laser marking wafer W caused by heaving can be eliminated.</p> |
