| 摘要 |
<p>An MRAM memory array (100) has non-linear word lines (110) and linear bit lines (120). The word lines (110) cross the bit lines (120) at memory cell locations (130), and are substantially coextensive with the bit lines (120) at the crossing points. When a current is passed through the word and bit lines (110, 120), the magnetic fields generated by the word line (110) and the bit line (120) at a coextensive portion are substantially aligned. The magnitude of the resultant field is therefore greater than in conventional, orthogonally oriented fields. Because the addition of the fields generated by the word and bit lines (110, 120) is enhanced, smaller word and bit line currents can be utilised, which reduces the size required for the memory array (100). The memory array (100) can also utilise memory cells (150) having a magnetic layer (162) for producing a transverse magnetic field. The transverse field is orthogonally oriented to the magnetic field generated by the word and bit lines (110, 120), and increases the reproducibility of switching of the memory cell (150). The transverse field also reduces the current required to switch the memory cell (150).</p> |
