| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a phase shift mask in which time necessary for the setting of a halftone region is shortened and its manufacturing is facilitated. SOLUTION: After placing a plurality of main patterns 1a and 1b by a predetermined pitch P, virtual regions 2a and 2b are formed by enlarging each of the main patterns 1a and 1b by a predetermined resizing amountΔ. When the virtual regions 2a and 2b have an overlapped region 3, the overlapped region 3 is set as a halftone region forming part which is placed between the virtual regions 2a and 2b and has predetermined transmittance T to exposure light. The resizing amountΔand the transmittance T are set so that a transfer size on the predetermined resist film of the main patterns 1a and 1b under predetermined exposure conditions falls within a desired range according to the change of the pitch P.</p> |
