发明名称 Method for making an accurate miniature semiconductor resonator
摘要 <p>A cantilevered beam is formed over a cavity to an accurate length by isotropically etching a fast-etching material, such as hydrogen silisquioxane, out of the cavity. The cavity is initially defined within a slow-etching material. The selectivity of the etch rates of the material within the cavity relative to the material defining the walls of the cavity permits accurate control of the length of the free end of the cantilevered beam. The resonant frequency of the cantilevered beam can be tuned to a narrow predetermined range by laser trimming.</p>
申请公布号 EP1263134(A2) 申请公布日期 2002.12.04
申请号 EP20020253603 申请日期 2002.05.22
申请人 STMICROELECTRONICS, INC. 发明人 THOMAS, DANIELLE
分类号 H01L21/822;H01L27/04;H01L49/00;H03H3/007;H03H9/24;(IPC1-7):H03H3/007 主分类号 H01L21/822
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