Nitride light-detector with a low dislocation density

摘要

A semiconductor light-detecting element includes a given substrate, an underlayer and a light-detecting element structure which are formed on said substrate in turn. The underlayer is made of a nitride semiconductor including Al element with a dislocation density of 10<11>/cm<2> or below. The light-detecting element structure is made of a nitride semiconductor layer group including Al element at a larger content than the nitride semiconductor making the underlayer with a dislocation density of 10<10>/cm<2> or below.