发明名称 |
Electrically pumped long-wavelength VCSEL and methods of fabrication |
摘要 |
A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR positioned on a substrate wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallographic direction which increases the radiative efficiency. A first cladding layer is positioned on the first DBR and an active region is epitaxially grown on the first cladding layer wherein the active region is epitaxially grown using plasma assisted MBE. A second DBR is epitaxially grown on the second cladding layer wherein the second DBR is epitaxially grown using MOCVD. The active region is epitaxially grown using plasma assisted MBE to increase the mole fraction of nitrogen (N) incorporation. The DBR's are grown using MOCVD to improve the electrical performance.
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申请公布号 |
US6489175(B1) |
申请公布日期 |
2002.12.03 |
申请号 |
US20010026846 |
申请日期 |
2001.12.18 |
申请人 |
JIANG WENBIN;CHENG JULIAN;SHIEH CHAN-LONG;LEE HSING-CHUNG |
发明人 |
JIANG WENBIN;CHENG JULIAN;SHIEH CHAN-LONG;LEE HSING-CHUNG |
分类号 |
H01L21/203;H01L21/205;H01S5/183;H01S5/323;H01S5/343;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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