Select line architecture for magnetic random access memories

摘要

A magnetic memory device for selectively writing one or more memory cells in the memory device includes a plurality of global write lines for selectively conveying a destabilizing current, the global write lines being disposed from the memory cells such that the destabilizing current passing through the global write lines does not destabilize unselected memory cells in the memory device, each global write line including a plurality of segmented write lines operatively connected thereto. The memory device further includes a plurality of segmented groups, each segmented group including a plurality of memory cells operatively coupled to a corresponding segmented write line, each segmented write line being disposed in relation to the plurality of corresponding memory cells such that the destabilizing current passing through the segmented write line destabilizes the corresponding memory cells for writing.