发明名称 Method for forming barrier and seed layer
摘要 A method for creating a highly reflective surface on an electroplated conduction layer. A barrier layer is deposited on a substrate using a self ionized plasma deposition process. The barrier layer has a thickness of no more than about one hundred angstroms. An adhesion layer is deposited on the barrier layer, using a self ionized plasma deposition process. A seed layer is deposited on the adhesion layer, also using a self ionized plasma deposition process, at a bias of no less than about one hundred and fifty watts. The combination of the barrier layer, adhesion layer, and seed layer is at times referred to herein as the barrier seed layer. The conduction layer is electroplated on the seed layer, thereby forming the highly reflective surface on the conduction layer, where the highly reflective surface has a reflectance of greater than about seventy percent.
申请公布号 US6489231(B1) 申请公布日期 2002.12.03
申请号 US20010907424 申请日期 2001.07.17
申请人 LSI LOGIC CORPORATION 发明人 KUMAR KIRAN;WANG ZHIHAI;GATABAY WILBUR G.
分类号 H01L21/265;H01L21/28;H01L21/285;H01L21/314;H01L21/316;H01L21/321;H01L21/336;H01L21/768;(IPC1-7):H01L21/476 主分类号 H01L21/265
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