| 摘要 |
PURPOSE: A flash memory device and a method for manufacturing the same are provided to be capable of reducing the size of a memory cell and improving topology by using an erase gate as an isolation region of the device. CONSTITUTION: A plurality of trenches(41) are located and spaced apart from each other in a semiconductor substrate. A plurality of high concentration impurity regions(42) are vertically located to the trenches and spaced apart from each other in the semiconductor substrate. A plurality of erase gates(44) are located in the trenches, respectively. A plurality of floating gates(46) are arrayed between the high concentration impurity regions and erase gates on the semiconductor substrate. A plurality of control gates(48) are formed between the erase gates on the floating gates.
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