| 摘要 |
PURPOSE: A polymer for photoresist, its preparation method and a chemical amplification photoresist composition using the polymer are provided, to improve the formation of micro pattern and the permeability of the photoresist composition. CONSTITUTION: The polymer is represented by the formula 1. The composition comprises the polymer; a photo acid generator; and a solvent. The method comprises the steps of polymerizing the aldehyde compound of the formula 2 and the fluorinated phenol compound of the formula 3 by condensation polymerization; and substituting some of the polymer with a protecting group capable of being deprotected by an acid. In the formulas 1, 2 and 3, R1 is H, a linear or cyclic alkyl group of C1-C6, phenyl group, naphthyl group, anthracenyl group, phenanthracenyl group, or a linear or cyclic alkyl group, phenyl group, naphthyl group, anthracenyl group, phenanthracenyl group substituted with 1-4 fluorine atoms; x is an integer of 1-3; R2 is an alkyl group of C1-c6 or an alkylalkoxy group of C1-C6; and 0.3<=m/(m+n)<= 0.9, and 0.1<=n/(m+n)/<=0.7. |
