| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser, capable of obtaining a stable current constriction effect with proper production efficiency and reducing the oscillation threshold. SOLUTION: The method for manufacturing a semiconductor laser comprises steps of forming a semiconductor laser structure on an n-type GaAs substrate 1, and injecting protons with a resist 8 and an SiNx film 7 as masks, as shown in Fig. (c); thereafter, removal of the film 7 and the resist 8 is conducted, and coating a p-type electrode 10 and a resist 88 on a contact layer 6; steps of forming a photoresist pattern of a ring shape as shown in Fig. (e), etching from the electrode 10 deeper than an MQW active layer 4 in a self-alignment manner by dry etching, and forming an optical waveguide; steps of then forming a p-type electrode 12 and an n-type electrode 13, as shown in Fig. (h); and step of finally executing RTA(rapid thermal annealing) at a temperature increase rate of 10 deg.C/s, annealing temperature of 375 deg.C, and annealing time of 30 s.
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